Method for production of group lll nitride semiconductor device
AssigneeShowa Denko K.K.
InventorsTakaki Yasuda, Mineo Okuyama
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Abstract
A method for producing a Group III nitride semiconductor device includes forming on a substrate or a surface of a Group III nitride semiconductor crystal a mask of a SiO2 or SiNx film partially covering the substrate or the surface of the Group III nitride semiconductor crystal and subsequently forming a Group III nitride semiconductor. The SiO2 film is formed by the radical shower CVD technique. The SiNx film is formed by the catalytic CVD technique.
Claims5
1-13. (canceled)
A method for producing a Group III nitride semiconductor device, comprising the steps of:
- stacking on a substrate an n-type layer, a light-emitting layer and a p-type layer in this order, said layers constituting a Group III nitride semiconductor layer;
- dry-etching the Group III nitride semiconductor layer to expose the n-type layer as a contact layer;
- and
- using as a mask for a portion of the Group III nitride semiconductor not to be exposed an SiO2 film formed by a radical shower CVD method during the step of dry etching.
A method for producing a Group III nitride semiconductor device, comprising the steps of:
- stacking on a substrate an n-type layer, a light-emitting layer and a p-type layer in this order, said layers constituting a Group III nitride semiconductor layer;
- dry-etching the Group III nitride semiconductor layer to expose the n-type layer as a contact layer;
- providing the n-type layer and the p-type layer with an n-type electrode and a p-type electrode, respectively;
- and
- using as a protective film covering a portion of the device between the n-type and p-type electrodes or an entire portion of the device an SiO2 film formed by a radical shower CVD method.
A method for producing a Group III nitride semiconductor device, comprising the steps of:
- forming on a substrate a mask formed of a SiNx by a catalytic CVD technique, which film partly covers the substrate;
- and
- forming a Group III nitride semiconductor on the substrate.
A method for producing a Group III nitride semiconductor device, comprising the steps of:
- forming on a surface of a Group III nitride semiconductor crystal a mask formed of a SiNx film by a catalytic CVD technique, which film partly covers the surface of the Group III nitride semiconductor crystal;
- and
- forming a Group III nitride semiconductor on the surface of the Group III nitride semiconductor crystal.
Dependencies are inferred from the claim text.