Manufacturing method of semiconductor device, and ic card, ic tag, rfid, transponder, bill, securities, passport, electronic apparatus, bag, and garment
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorJun Koyama
Life of this patent
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Abstract
The present invention provides a manufacturing method of a semiconductor device used as an ID chip, by which data can be written with improved throughput. According to the manufacturing method of a semiconductor device having a modulation circuit, a demodulation circuit, a logic circuit, a memory circuit, and an antenna circuit over an insulating substrate, the memory circuit is a nonvolatile memory circuit of which data is written in the manufacture of the semiconductor device, and elements in a data portion are formed by electron beam exposure or laser exposure while the other portions are formed by mirror projection exposure, step and repeat exposure, or step and scan exposure.
Claims20
A manufacturing method of a semiconductor device comprising:
- forming a plurality of circuit portions each having a modulation circuit, a demodulation circuit, and a logic circuit over an insulating substrate by a first exposure means;
- and
- forming a plurality of different memory circuits over the substrate by a second exposure means.
A manufacturing method of a semiconductor device comprising:
- forming an object to be processed over an insulating substrate;
- applying a photoresist on the object;
- exposing the photoresist by a first exposure means;
- exposing the photoresist by a second exposure means;
- developing the photoresist exposed by the first exposure means and the second exposure means;
- and
- etching the object by using the developed photoresist to form a plurality of first patterns of circuit portions each having a modulation circuit, a demodulation circuit, and a logic circuit and a plurality of second patterns of different memory circuits.
A manufacturing method of a semiconductor device comprising:
- forming an object to be processed over an insulating substrate;
- applying a first photoresist on the object;
- exposing the first photoresist by a first exposure means;
- developing the exposed first photoresist;
- etching the object by using the developed first photoresist to form a plurality of first patterns of circuit portions each having a modulation circuit, a demodulation circuit, and a logic circuit;
- applying a second photoresist on the object;
- exposing the second photoresist by a second exposure means;
- developing the exposed second photoresist;
- and
- etching the object by using the developed second photoresist to form a plurality of second patterns of different memory circuits.
A manufacturing method of a semiconductor device comprising:
- forming an object to be processed over an insulating substrate;
- applying a photoresist on the object;
- exposing the photoresist by a first exposure means;
- exposing the photoresist by a second exposure means;
- developing the photoresist exposed by the first exposure means and the second exposure means;
- and
- etching the object by using the developed photoresist to form a plurality of first patterns of first circuit portions and a plurality of second patterns of different second circuit portions,
- wherein the second exposure means can change the contents of exposure depending on program.
A manufacturing method of a semiconductor device comprising:
- forming an object to be processed over an insulating substrate;
- applying a photoresist on the object;
- exposing the photoresist by a first exposure means;
- exposing the photoresist by a second exposure means;
- developing the photoresist exposed by the first exposure means and the second exposure means;
- and
- etching the object by using the developed photoresist to form a plurality of first patterns of first circuit portions and a plurality of second patterns of different second circuit portions,
- wherein different data is stored in each of the second circuit portions.
Dependencies are inferred from the claim text.