Via structures and trench structures and dual damascene structures
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi-Chen Huang, Chien Fu, Ming-Hong Hsieh, Hui Ouyang, Yi-Nien Su, Hun-Jan Tao
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Abstract
Via hole and trench structures and fabrication methods are disclosed. The structure includes a conductive layer in a dielectric layer, and a via structure in the dielectric layer contacting a portion of a surface of the conductive layer. The via structure includes the conductive liner contacting the portion of the surface of the first conductive layer. A trench structure is formed on the via structure in the dielectric without the conductive liner layer in the trench.
Claims11
A structure, comprising:
- a first conductive layer in a dielectric layer;
- a via structure in the dielectric layer contacting a portion of a surface of the first conductive layer, wherein the via structure comprises a conductive liner therein, contacting the portion of the surface of the first conductive layer;
- and
- a trench structure on the via structure in the dielectric layer without the conductive liner therein.
A semiconductor structure, comprising:
- a substrate having at least one device and at least one dual damascene structure formed over the substrate, the dual damascene substrate comprising:
- a first conductive layer in a dielectric layer;
- a via structure in the dielectric layer contacting a portion of a surface of the first conductive layer, wherein a conductive liner is in the via structure, contacting the portion of the surface of the first conductive layer;
- a trench structure on the via structure in the dielectric layer without the conductive liner therein;
- and
- a second conductive layer in the trench structure and the via structure.
A semiconductor structure, comprising:
- a first conductive layer disposed over a substrate;
- a dielectric layer disposed over the first conductive layer;
- and
- a dual damascene structure within the dielectric layer and contacting the first conductive layer,
- wherein the dual damascene structure comprises a trench structure disposed over a via structure, the dual damascene structure comprising a barrier layer disposed around a second conductive layer and the via structure comprising a conductive liner disposed around the barrier layer and contacting the first conductive layer.
Dependencies are inferred from the claim text.