Semiconductor device and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Jun Koyama
Life of this patent
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Abstract
The aperture ratio of a pixel of a reflecting type display device is improved without increasing the number of masks and without using a black mask. Locations for light shielding between pixels are arranged such that a pixel electrode overlaps with a portion of a gate wiring and a source wiring. In locations for shielding TFTs, a high pixel aperture ratio is realized by forming a color filter (red, or lamination of red and blue), formed on an opposing substrate.
Claims13
A method for manufacturing a semiconductor device comprising:
- forming a semiconductor layer over a substrate;
- forming a gate insulating film over the semiconductor layer;
- and
- forming a source wiring over the gate insulating film by etching a conductive film in an inductively coupled plasma.
A method for manufacturing a semiconductor device comprising:
- forming a semiconductor layer over a substrate;
- forming a gate insulating film over the semiconductor layer;
- and
- forming a source wiring over the gate insulating film by etching a conductive film in an inductively coupled plasma, wherein the source wiring includes a tapered portion.
A method for manufacturing a semiconductor device comprising:
- forming a semiconductor layer over a substrate;
- forming a gate insulating film over the semiconductor layer;
- and
- forming a source wiring over the gate insulating film by etching a conductive film in an inductively coupled plasma at least twice.
A method for manufacturing a semiconductor device comprising:
- forming a semiconductor layer over a substrate;
- forming a gate insulating film over the semiconductor layer;
- forming a source wiring over the gate insulating film by etching a conductive film in an inductively coupled plasma;
- and
- electrically connecting the source wiring and the semiconductor layer.
A method for manufacturing a semiconductor device comprising:
- forming a semiconductor layer over a substrate;
- forming a gate insulating film over the semiconductor layer;
- forming a source wiring over the gate insulating film by etching a conductive film in an inductively coupled plasma, wherein the wiring includes a tapered portion;
- and
- electrically connecting the source wiring and the semiconductor layer.
A method for manufacturing a semiconductor device comprising:
- forming a semiconductor layer over a substrate;
- forming a gate insulating film over the semiconductor layer;
- forming a source wiring over the gate insulating film by etching a conductive film in an inductively coupled plasma at least twice;
- and
- electrically connecting the source wiring and the semiconductor layer.
Dependencies are inferred from the claim text.