Method of manufacturing semiconductor device

Abstract

Provided is a method of manufacturing a semiconductor device in which, when a polyimide resin film is formed as a protective film on a front surface of a semiconductor chip, the polyimide resin film disposed on scribe lines is removed and the polyimide resin film disposed on a circumferential portion of the semiconductor wafer is also removed. Thus, when a rear surface of the semiconductor wafer is ground, the outer circumferential portion of the semiconductor wafer and the surface protective tape can be completely bonded to each other, thereby making it possible to fill a gap between the surface protective tape and each scribe line formed on the front surface of the semiconductor wafer, prevent grinding wafer from penetrating into the gap when the rear surface of the semiconductor wafer is ground, and prevent the scribe lines and the front surface of the semiconductor chip from being contaminated with grinding swarf.

Dependencies are inferred from the claim text.