US 2007/0184657 A1 · ETCHING METHOD

Abstract

An etching method includes the step of forming recesses by performing a plasma etching on a target layer of a target object in a processing chamber of a plasma processing apparatus. The plasma etching is performed by using a mask, which is formed on the target layer and is provided with opening patterns including a dense patterned region and a sparse patterned region, such that portions of the target layer exposed through the opening pattern are etched by a plasma to form the recesses; and the plasma is exited by introducing a processing gas. A ratio of a flow rate of HBr to a flow rate of Cl2 (HBr/Cl2) is greater than or equal to about 1.2 and a ratio of a flow rate of the fluorine-containing gas to the flow rate of HBr (fluorine-containing gas/HBr) is greater than or equal to about 1.0.

Claims9

Dependent claims

An etching method, comprising the steps of:

forming recesses by performing a plasma etching on a target layer of a target object in a processing chamber of a plasma processing apparatus,
wherein the plasma etching is performed by using a mask, which is formed on the target layer and is provided with opening patterns including a dense patterned region having a narrower opening width and a sparse patterned region having a wider opening width, such that portions of the target layer exposed through the opening pattern are etched by a plasma to form the recesses;
and the plasma is exited by introducing a processing gas including at least Cl2, HBr and a fluorine-containing gas selected from CF4, CHF3, SF6 and NF3, a ratio of a flow rate of HBr to a flow rate of Cl2 (HBr/Cl2) being greater than or equal to about 1.2 and a ratio of a flow rate of the fluorine-containing gas to the flow rate of HBr (fluorine-containing gas/HBr) being greater than or equal to about 1.0.

Dependencies are inferred from the claim text.

Etching method

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Etching method

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Abstract

Claims9