Method for preparing a metal feature surface prior to electroless metal deposition
AssigneeTexas Instruments Incorporated
InventorsAaron Frank, David Gonzalez
Life of this patent
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Abstract
The present invention provides a method for manufacturing an interconnect and an integrated circuit. The method for manufacturing the interconnect, in one embodiment, includes forming a first metal feature (310) over a substrate, subjecting the first metal feature (310) to a hydrogen containing plasma (410), the hydrogen containing plasma (410) configured to remove organic residue (320) from an exposed surface of the first metal feature (310), and electroless depositing a second metal feature (510) on the first metal feature (310) having been subjected to the hydrogen containing plasma (410).
Claims20
A method for manufacturing an interconnect, comprising:
- forming a first metal feature over or within a substrate;
- subjecting the first metal feature to a hydrogen containing plasma, the hydrogen containing plasma configured to remove organic residue from an exposed surface of the first metal feature;
- and
- electroless depositing a second metal feature on the first metal feature having been subjected to the hydrogen containing plasma.
A method for manufacturing an interconnect, comprising:
- forming a first metal feature over or within a substrate;
- subjecting the first metal feature to a hydrogen containing plasma, the hydrogen containing plasma using an RF power ranging from about 50 watts to about 5000 watts, a temperature ranging from about 25° C. to about 350° C., and a pressure ranging from about 50 mtorr to about 3000 mtorr, and thereby configured to remove organic residue from an exposed surface of the first metal feature;
- and
- electroless depositing a second metal feature on the first metal feature having been subjected to the hydrogen containing plasma.
A method for manufacturing an integrated circuit, comprising:
- forming one or more transistors over a substrate;
- and
- forming one or more interconnects over the one or more transistors to form an operational integrated circuit, including;
- forming a first metal feature over the substrate;
- subjecting the first metal feature to a hydrogen containing plasma, the hydrogen containing plasma configured to remove organic residue from an exposed surface of the first metal feature;
- and
- electroless depositing a second metal feature on the first metal feature having been subjected to the hydrogen containing plasma.
Dependencies are inferred from the claim text.