Active area bonding compatible high current structures
AssigneeIntersil Americas Inc.
InventorsJohn Gasner, Michael Church, Sameer Parab, Paul Bakeman Jr., David Decrosta, Robert Lomenick, Chris McCarty
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Abstract
A method of forming a semiconductor structure is provided. One method comprises forming a device region between a substrate and a bond pad. Patterning a conductor between the bond pad and the device region with gaps. Filling the gaps with insulation material that is harder than the conductor to form pillars of relatively hard material that extend through the conductor and forming an insulation layer of the insulation material between the conductor and the bond pad.
Claims20
A method of forming a semiconductor structure, the method comprising:
- forming a device region between a substrate and a bond pad;
- patterning a conductor between the bond pad and the device region with gaps;
- filling the gaps with insulation material that is harder than the conductor to form pillars of relatively hard material that extend through the conductor;
- and
- forming an insulation layer of the insulation material between the conductor and the bond pad.
A method of forming a semiconductor structure, the method comprising:
- forming a plurality of intermediate metal layers between a top metal layer and a substrate;
- forming at least one device in the substrate;
- forming a bond pad on the top metal layer, wherein the at least one device is located directly under the bond pad;
- and
- forming a plurality of insulation layers, the insulation layers separating the plurality of intermediate metal layers, one of the insulation layers between the top metal layer and the closest intermediate metal layer to the top metal layer having a thickness selected to resist cracking.
A method of forming a semiconductor structure, the method comprising:
- forming at least one conductive layer between a substrate and a top conductive layer;
- forming a conductor patterned with gaps from the at least one conductive layer;
- filling the gaps with insulation material that is relatively stronger than the conductive layer to form relatively strong pillars through the conductor;
- and
- forming a first insulation layer between the at least one conductive layer and the top conductive layer
Dependencies are inferred from the claim text.