US 2007/0184638 A1 · Mask for silicon crystallization, method for crystallizing silicon using the same and display device

Abstract

A mask for silicon crystallization capable of minimizing the number of grain boundaries in crystallized silicon, a method for crystallizing silicon using the mask, and a display device are presented. The mask includes a group of slits that are inclined at a predetermined angle with respect to a scan direction and a group of slits including slits inclined at a predetermined angle with respect to the former group of slits. The groups of slits are separated by an interval along the scan direction, and the substrate and/or mask is moved by the interval between irradiation by laser through the slits. Further, there are provided a method for crystallizing silicon using the mask and a display device. By reducing the number of grain boundaries that extend horizontally or vertically on the substrate, the invention obviates a design limitation associated with the directional anisotropy in sequential lateral solidification (SLS) technique.

Claims12

Dependent claims

A mask for silicon crystallization, comprising:

a first group of slits including one or more slits inclined at an obtuse angle with respect to a scan direction, wherein the slits are spaced apart from one another in a direction perpendicular to the scan direction;
a second group of slits including one or more slits inclined at an obtuse angle with respect to the scan direction, wherein the slits are spaced apart from one another in a direction perpendicular to the scan direction;
a third group of slits including one or more slits inclined at an acute angle with respect to the scan direction, wherein the slits are arranged spaced apart from one another in a direction perpendicular to the scan direction;
and
a fourth group of slits including one or more slits inclined at an acute angle with respect to the scan direction, wherein the slits are spaced apart from one another in a direction perpendicular to the scan direction,
wherein the first, second, third and fourth groups of slits are spaced apart from one another in the scan direction.

3 more elements

Dependencies are inferred from the claim text.

Mask for silicon crystallization, method for crystallizing silicon using the same and display device

Life of this patent

Mask for silicon crystallization, method for crystallizing silicon using the same and display device

Life of this patent

Abstract

Claims12