Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy
AssigneeThe Regents of the University of California
InventorsBenjamin Haskell, Melvin McLaurin, Steven DenBaars, James Speck, Shuji Nakamura
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Abstract
A method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films. The method provides for a significant reduction in structural defect densities via a lateral overgrowth technique. High quality, uniform, thick m-plane GaN films are produced for use as substrates for polarization-free device growth.
Claims20
A device fabricated using non-polar III-nitride with a reduction in dislocation density as compared to III-nitride films grown heteroepitaxially containing dislocation densities in excess of 108 cm−2.
An m-plane III-nitride lateral growth comprising a coalesced film that has lower dislocation densities in overgrown regions due to blocking or bending of dislocations through lateral growth.
A III-nitride film having a top surface with a non-polar orientation.
A method of growing non-polar III-nitride, comprising:
- (a) performing a lateral epitaxial overgrowth (LEO) of the III-nitride from a surface resulting in a top surface that is a non-polar III-nitride.
Dependencies are inferred from the claim text.