Multivoltage thin film capacitor

A method of forming a thin film capacitor, comprising:

• forming a first plurality of electrodes on a top surface of a substrate formed of at least one of silicon, glass, metal oxide, semiconductor, metal foil, tape cast ceramic, and polymer;
• forming a first dielectric material having a first thickness on the first plurality of electrodes formed of at least one of barium strontium titanate, barium titanate, and strontium titanate;
• forming a second plurality of electrodes on the first dielectric material;
• forming a second dielectric material having a second thickness on the second plurality of electrodes;
• forming a plurality of contact holes in at least one of the first dielectric, second dielectric and the substrate;
• forming a third plurality of electrodes on the second dielectric material;
• and
• forming a plurality of conductors disposed to connect a first power supply to at least a portion of the first plurality of electrodes, a second power supply to at least a portion of the second plurality of electrodes, and a third power supply to at least a portion of the third plurality of electrodes.

A method of forming a capacitor, comprising:

• forming a plurality of electrical vias connecting selected portions of a top surface of a substrate to selected portions of a bottom surface of the substrate;
• forming at least two pluralities of electrodes on each of the top and bottom surface of the substrate, each electrically separated from the other pluralities of electrodes by at least one dielectric layer having a selected dielectric constant and selected thickness;
• forming a plurality of electrical connections disposed to connect to at least one external electrical circuit;
• and
• forming electrical conductors disposed to provide different voltage potentials to selected ones of the at least two pluralities of electrodes.