Methods of forming integrated circuitry, and methods of forming dynamic random access memory cells

A method of forming integrated circuitry, comprising:

• providing a semiconductor material;
• forming openings extending into the semiconductor material and annealing the substrate around the openings to form cavities within the semiconductor material;
• substantially filling the cavities with an electrically insulative material to form segments of the electrically insulative material, the segments being spaced from one another by intervening regions of the semiconductor material;
• forming a transistor supported by the semiconductor material;
• the transistor comprising a transistor gate over the semiconductor material, and comprising a pair of source/drain regions proximate the gate;
• the transistor further comprising a channel region beneath the gate and between the source/drain regions;
• and
• wherein the source/drain regions are primarily directly over one or more of the segments of the electrically insulative material.

A method of forming a dynamic random access memory cell, comprising:

• providing a semiconductor material;
• forming openings extending into the semiconductor material and annealing the substrate around the openings to form cavities within the semiconductor material;
• substantially filling the cavities with an electrically insulative material to form segments of the electrically insulative material, the segments being spaced from one another by intervening regions of the semiconductor material;
• forming a transistor supported by the semiconductor material;
• the transistor comprising a transistor gate over the semiconductor material, and comprising a pair of source/drain regions proximate the gate;
• the transistor further comprising a channel region beneath the gate and between the source/drain regions;
• the source/drain regions being primarily directly over a pair of the segments of the electrically insulative material, and the channel region being associated with an intervening region of the semiconductor material between the pair of the segments of the electrically insulative material;
• and
• forming a capacitor electrically coupled with one of the source/drain regions.