Semiconductor device and manufacturing method thereof
AssigneeFujitsu Limited
InventorsJirou Miura, Mitsushi Fujiki, Aki Dote, Tomohiro Takamatsu
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Abstract
An interlayer insulating film covering a ferroelectric capacitor is formed, and through the interlayer insulating film, contact holes each reaching a capacitor electrode are formed. A wiring connected to the capacitor electrode through the contact hole is further formed above the interlayer insulating film. A planar shape of the contact hole is a regular octagon, a regular rectangle with four angles thereof being rounded, an octagon with a length of each neighboring side thereof being different to each other, a circle, and so forth.
Claims15
1-6. (canceled)
A manufacturing method of a semiconductor device, comprising the steps of:
- forming a ferroelectric capacitor above a substrate;
- forming an interlayer insulating film which covers said ferroelectric capacitor;
- forming a hole reaching an electrode of said ferroelectric capacitor through said interlayer insulating film;
- and
- forming a wiring which is connected to said electrode through said hole above said interlayer insulating film,
- in the step of forming said hole, a planar shape of said hole being any one type selected from a group consisting of:
- (1) a polygon with an interior angle of each angle thereof being obtuse;
- (2) a closed curve with a bending direction thereof being constantly inward with respect to said hole;
- and
- (3) a shape which consists of a line segment and a curve with a bending direction thereof being constantly inward with respect to said hole, an angle between a tangent of said curve and said line segment at an intersection of said line segment and said curve being obtuse, and an interior angle of an intersection of two of said line segments being obtuse.
Dependencies are inferred from the claim text.