Method for manufacturing semiconductor device
OwnerKazuaki Nakajimainventor
Life of this patent
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Abstract
A gate insulating film is formed on a silicon substrate, a conductor film constituting a gate electrode is formed on the gate insulating film by a formation method using an organic material, and the silicon substrate, on which the conductor film is formed, is heated in a mixed atmosphere of steam which is an oxidizing atmosphere and hydrogen which is a reducing atmosphere with a partial pressure ratio of hydrogen to steam which is set such that carbon is oxidized and that a metal material constituting the conductor film is reduced.
Claims20
A method for manufacturing a semiconductor device, comprising:
- forming a gate insulating film on a semiconductor substrate;
- forming a conductor film constituting a gate electrode on the gate insulating film by a formation method using an organic material;
- and
- heating the semiconductor substrate, on which the conductor film is formed, in a mixed atmosphere of an oxidizing atmosphere and a reducing atmosphere with a partial pressure ratio of the reducing atmosphere to the oxidizing atmosphere which is set such that carbon is oxidized and that a metal material constituting the conductor film is reduced.
A method for manufacturing a semiconductor device in which a P-type MOS transistor is formed, comprising:
- forming a gate insulating film on a semiconductor substrate;
- forming a conductor film constituting a gate electrode of the P-type MOS transistor on the gate insulating film by a formation method using an organic material;
- and
- heating the semiconductor substrate, on which the conductor film is formed, in a mixed atmosphere of an oxidizing atmosphere and a reducing atmosphere with a partial pressure ratio of the reducing atmosphere to the oxidizing atmosphere which is set such that carbon is oxidized and that a metal material constituting the conductor film is reduced.
A method for manufacturing a semiconductor device in which a P-type MOS transistor and an N-type MOS transistor are formed, comprising:
- forming a gate insulating film on a semiconductor substrate;
- forming a first conductor film constituting a gate electrode of the P-type MOS transistor on the gate insulating film by a formation method using an organic material;
- heating the semiconductor substrate, on which the first conductor film is formed, in a mixed atmosphere of an oxidizing atmosphere and a reducing atmosphere with a partial pressure ratio of the reducing atmosphere to the oxidizing atmosphere which is set such that carbon is oxidized and that a metal material constituting the first conductor film is reduced;
- removing a part of the first conductor film formed in a region where the N-type MOS transistor is to be formed;
- and
- forming a second conductor film constituting a gate electrode of the N-type MOS transistor.
Dependencies are inferred from the claim text.