US 2007/0184590 A1 · Method for manufacturing a semiconductor device and laser irradiation method and laser irradiation apparatus

Abstract

[Object]When the CW laser is employed for annealing the semiconductor film, a device having a high characteristic can be expected. On the other hand, when the beam shaped to be elliptical is scanned on the semiconductor film, a proportion of excimer-like crystal grain region becomes large and this is a problem in point of high integration. The present invention is to make the excimer-like crystal grain region formed over the semiconductor film as small as possible. [Solution]In the present invention, a fundamental wave having a wavelength of approximately 1 μm is irradiated supplementarily to the semiconductor film, which is the irradiated surface, simultaneously with a harmonic emitted from a CW laser. In addition, the fundamental wave is irradiated with a large amount of energy to a region irradiated by the harmonic with a small amount of energy, and the fundamental wave is irradiated with a small amount of energy to a region irradiated by the harmonic with a large amount of energy. Thus it becomes possible to form the long crystal grain region in the semiconductor film while suppressing the formation of the excimer-like crystal grain region.

Claims25

Dependent claims

A method for manufacturing a semiconductor device comprising:

forming a non-single crystal semiconductor film over a substrate,
irradiating a first beam having a wavelength range in which an absorption coefficient to the non-single crystal semiconductor film is 5×103/cm or more simultaneously with a second beam having a wavelength range in which an absorption coefficient to the non-single crystal semiconductor film is 5×102/cm or less and an absorption coefficient to a melted state of the non-single crystal semiconductor film is 5×103/cm or more in such a way that the first beam and the second beam are overlapped on the non-single crystal semiconductor film, and
moving the non-single crystal semiconductor film to a first direction relative to the first beam and the second beam.

A method for manufacturing a semiconductor device comprising:

forming a non-single crystal semiconductor film over a substrate,
processing a first beam emitted from a laser oscillator 1 outputting a wavelength not longer than that of visible light into a long beam on an irradiated surface assuming that the non-single crystal semiconductor film is the irradiated surface,
irradiating a second beam emitted from a laser oscillator 2 outputting a fundamental wave with energy distribution thereof homogenized in a region irradiated with the first beam in such a way that the first beam and the second beam are overlapped on the irradiated surface,
forming a long crystal grain region and an inferior crystalline region in opposite ends of the long crystal grain region while moving the irradiated surface to a first direction relative to the first beam and the second beam, and
moving the irradiated surface to a second direction relative to the first beam and the second beam.

2 more elements

A method for manufacturing a semiconductor device comprising:

forming a non-single crystal semiconductor film over a substrate,
processing a first beam emitted from a laser oscillator 1 outputting a wavelength not longer than that of visible light into a long beam on an irradiated surface assuming that the non-single crystal semiconductor film is the irradiated surface,
irradiating a second beam emitted from a laser oscillator 2 outputting a fundamental wave so as to overlap with the first beam in such a way that energy of the second beam is decreased in a region where energy of the first beam is high, and the energy of the second beam is increased in a region where the energy of the first beam is low,
forming a long crystal grain region and an inferior crystalline region in opposite ends of the long crystal grain region while moving the irradiated surface to a first direction relative to the first beam and the second beam, and
moving the irradiated surface to a second direction relative to the first beam and the second beam.

2 more elements

A method for manufacturing a semiconductor device comprising:

forming a non-single crystal semiconductor film over a substrate,
processing a first beam emitted from a laser oscillator 1 outputting a wavelength not longer than that of visible light into a long beam on an irradiated surface assuming that the non-single crystal semiconductor film is the irradiated surface,
irradiating a second beam emitted from a laser oscillator 2 outputting a fundamental wave so as to overlap with the first beam in such a way that a width of the second beam is narrowed in a region where energy of the first beam is high, and the width of the second beam is broadened in a region where the energy of the first beam is low,
forming a long crystal grain region and an inferior crystalline region in opposite ends of the long crystal grain region while moving the irradiated surface to a first direction relative to the first beam and the second beam, and
moving the irradiated surface to a second direction relative to the first beam and the second beam.

2 more elements

Dependencies are inferred from the claim text.

Method for manufacturing a semiconductor device and laser irradiation method and laser irradiation apparatus

Life of this patent

Method for manufacturing a semiconductor device and laser irradiation method and laser irradiation apparatus

Life of this patent

Abstract

Claims25