Semiconductor constructions and semiconductor device fabrication methods

A method of fabricating a semiconductor device, comprising:

• etching a substrate formed on a backside of a semiconductor wafer to form a recess in said substrate;
• and
• forming a sputter film in said recess, said sputter film including:
• a first material having a coefficient of thermal expansion (CTE) which is at least substantially equal to a CTE of said substrate;
• and
• a second material having a thermal conductivity which is greater than a thermal conductivity of said substrate.

A semiconductor device comprising:

• a substrate formed on a backside of a semiconductor wafer, the substrate including a recess;
• and
• a conversion region formed in said substrate, said conversion region including at least one of:
• an interdiffusion layer including a material having a thermal conductivity greater than a thermal conductivity of said substrate which is formed in pores of said substrate in said area of said recess, and a layer of said material formed on said interdiffusion layer;
• and
• a sputter film formed in said recess, said sputter film including:
• a first material having a coefficient of thermal expansion (CTE) which is at least substantially equal to a CTE of said substrate;
• and
• a second material having a thermal conductivity which is greater than a thermal conductivity of said substrate.