Method of fabricating wafer level package
AssigneeSamsung Electronics Co., Ltd.
InventorsHyun-Soo Chung, Seong-Deok Hwang, Seung-Kwan Ryu, Dong-Ho Lee
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Abstract
A method of fabricating a wafer level package may include providing semiconductor substrate having a bonding pad; forming a passivation layer on the semiconductor substrate and partially exposing the boding pad, forming a first insulating layer on the passivation layer; forming a seed metal layer on the first insulating layer and the bond pad; forming a metal bump on a portion of the seed metal layer; forming a redistributing metal layer on the seed metal layer by melting the metal bump; forming a second insulating layer on the first insulating layer and the redistributing metal layer to expose a metal pad; and forming a conductive bump on the exposed metal pad.
Claims14
A method of fabricating a semiconductor level package, the method comprising:
- providing a semiconductor substrate having a bonding pad;
- forming a passivation layer on the semiconductor substrate and partially exposing the bonding pad;
- forming a first insulating layer on the passivation layer;
- forming a seed metal layer on the first insulating layer and the bonding pad;
- forming a metal bump on a portion of the seed metal layer;
- forming a redistributing metal layer on the seed metal layer by melting the metal bump;
- forming a second insulating layer on the first insulating layer and the redistributing metal layer to expose a metal pad;
- and
- forming a conductive bump on the exposed metal pad.
Dependencies are inferred from the claim text.