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US 2007/0184572 A1Published application
Semiconductive device fabricated using a raised layer to silicide the gate
AssigneeTexas Instruments Incorporated
InventorsPuneet Kohli, Manfred Ramin
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Abstract
In one aspect, the invention provides a method of fabricating a semiconductive device 200 that comprises forming a raised layer [510] adjacent a gate [340] and over a source/drain [415], depositing a silicidation layer [915] over the gate [340] and the raised layer [510], and moving at least a portion of the silicidation layer [915] into the source/drain [415] through the raised layer [510].
Claims20
A method of fabricating a semiconductive device, comprising:
- forming a raised layer adjacent a gate and over a source/drain;
- depositing a silicidation layer over the gate and the raised layer;
- and
- siliciding the raised layer and at least substantially siliciding the gate with the silicidation layer.
1 more element
A method of manufacturing a semiconductive device, comprising:
- forming gates with a hardmask located thereover over a semiconductive substrate;
- forming source/drains adjacent the gates;
- forming raised layers adjacent the gates and over the source/drains;
- removing the hardmask from each of the gates;
- depositing a silicidation layer over the gates and the raised layers;
- and
- siliciding the raised layer and at least substantially siliciding the gates with the silicidation layer.
4 more elements
Dependencies are inferred from the claim text.