Solid-state imaging apparatus and method for producing the same

A method for producing a solid-state imaging apparatus comprising:

• a plurality of photosensitive cells disposed in a matrix in a photosensitive region on a semiconductor substrate;
• and
• a driving unit for driving the plurality of photosensitive cells,
• wherein each of the photosensitive cells includes:
• a photodiode formed to be exposed on a surface of the semiconductor substrate, for accumulating signal charge obtained by subjecting incident light to photoelectric exchange;
• a transfer transistor formed on the semiconductor substrate, for transferring the signal charge accumulated in the photodiode;
• a floating diffusion layer formed on the semiconductor substrate, for temporarily accumulating the signal charge transferred by the transfer transistor;
• and
• an amplifier transistor formed on the semiconductor substrate, for amplifying the signal charge temporarily accumulated in the floating diffusion layer,
• wherein a source/drain diffusion layer provided in the amplifier transistor is covered with a salicide layer, and the floating diffusion layer is formed to be exposed on the surface of the semiconductor substrate,
• the method comprising:
• forming the photodiode, the transfer transistor, and the amplifier transistor on the semiconductor substrate;
• forming a resist in a predetermined pattern so as to cover the photodiode, the transfer transistor, and the amplifier transistor;
• implanting ions into the semiconductor substrate using the resist as a mask so as to form the floating diffusion layer;
• removing the resist and forming a salicide blocking film so as to cover the floating diffusion layer and the photodiode;
• forming a source/drain diffusion layer of the amplifier transistor;
• and
• forming a salicide layer so as to cover the source/drain diffusion layer of the amplifier transistor.

A method for producing a solid-state imaging apparatus comprising:

• a plurality of photosensitive cells disposed in a matrix in a photosensitive region on a semiconductor substrate;
• and
• a driving unit for driving the plurality of photosensitive cells,
• wherein each of the photosensitive cells includes:
• a photodiode formed to be exposed on a surface of the semiconductor substrate, for accumulating signal charge obtained by subjecting incident light to photoelectric exchange;
• a transfer transistor formed on the semiconductor substrate, for transferring the signal charge accumulated in the photodiode;
• a floating diffusion layer formed on the semiconductor substrate, for temporarily accumulating the signal charge transferred by the transfer transistor;
• and
• an amplifier transistor formed on the semiconductor substrate, for amplifying the signal charge temporarily accumulated in the floating diffusion layer,
• wherein a source/drain diffusion layer provided in the amplifier transistor is covered with a salicide layer, and the floating diffusion layer is formed to be exposed on the surface of the semiconductor substrate,
• the method comprising:
• forming a resist in a predetermined pattern on the semiconductor substrate;
• implanting ions using the resist as a mask so as to form the photodiode;
• removing the resist and forming the transfer transistor and the amplifier transistor on the semiconductor substrate;
• forming a first salicide blocking film so as to cover the photodiode;
• implanting ions into the semiconductor substrate so as to form the floating diffusion layer and the source/drain diffusion layer of the amplifier transistor;
• forming a second salicide blocking film so as to cover the floating diffusion layer;
• and
• forming a salicide layer so as to cover the source/drain diffusion layer of the amplifier transistor.