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US 2007/0184567 A1Published application
Method for material growth of gan-based nitride layer
AssigneeEpivalley Co., Ltd.
InventorsTae Yoo, Eun Park
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Abstract
The present invention relates to a method for forming a GaN-based nitride layer comprising a first step of forming a first layer comprising SiaCbNc (c,fc>0, a≧0) on a sapphire substrate and a second step for forming a nitride layer comprising a GaN component on the first layer comprising SiaCbNc (c,b>0, a≧0).
Claims13
A method for forming a GaN-based nitride layer comprising
- a first step of forming a first layer comprising SiaCbNc (c,b>0, a≧0) on a sapphire substrate;
- and
- a second step for forming a nitride layer comprising a GaN component on the first layer comprising SiaCbNc (c,b>0, a≧0).
A method for forming a GaN-based nitride layer comprising
- a first step of forming a first layer comprising SiaCbNc (c,b>0, a≧0) on a sapphire substrate;
- and
- a second step for forming a nitride layer comprising Al(a)In(b)Ga(c)N (a+b+c=1) on the first layer comprising SiaCbNc (c,b>0, a≧0).
Dependencies are inferred from the claim text.