Apparatus and method for plasma etching
AssigneeHitachi High-Technologies Corporation
InventorsGo Miya, Manabu Edamura, Ken Yoshioka, Ryoji Nishio
Life of this patent
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Abstract
A plasma etching method for a plasma etching apparatus including: a processing chamber for performing plasma etching on an object to be processed; a first gas supply source; a second gas supply source; a first gas inlet for introducing a processing gas into the processing chamber; a second gas inlet for introducing a processing gas into the processing chamber; a flow rate regulator for regulating the flow rate of the processing gas; and a gas shunt for dividing the first processing gas into a plurality of portions, wherein the second processing gas is merged with at least one part between the gas shunt and the first gas inlet and between the gas shunt and the second gas inlet.
Claims4
A plasma etching method for a plasma etching apparatus comprising:
- a processing chamber for performing plasma etching on an object to be processed;
- a first gas supply source;
- a second gas supply source;
- a first gas inlet for introducing a processing gas into the processing chamber;
- a second gas inlet for introducing a processing gas into the processing chamber;
- a flow rate regulator for regulating the flow rate of the processing gas;
- and
- a gas shunt for dividing the first processing gas into a plurality of portions,
- wherein the second processing gas is merged with at least one part between the gas shunt and the first gas inlet and between the gas shunt and the second gas inlet.
Dependencies are inferred from the claim text.