Loading patent…
AssigneeTokyo Electron Limited
InventorsShigeo Ashigaki, Yoshihiro Kato, Yoshihiro Hirota, Yusuke Muraki, Tetsu Kawasaki, Satoru Shimura
Estimating the term…
A processing method of a substrate includes: a step of forming an Si—C based film and a resist film in turn on an objective film to be etched that has been formed on a substrate; a first etching step of etching the Si—C based film making use of the resist film as a mask; and a second etching step of etching the objective film to be etched making use of the resist film and the Si—C based film as a mask. The processing method further includes a peeling-off step of peeling-off the resist film at a desired timing. The peeling-off step includes a preparing step of preparing an organic solvent as a release agent, and an applying step of applying the organic solvent to the resist film.
A peeling-off method of a resist film on an Si—C based film that has been formed on a substrate comprising:
A reworking method of a resist film comprising:
A processing method of a substrate comprising:
A peeling-off apparatus for peeling-off a resist film on an Si—C based film that has been formed on a substrate comprising:
A reworking apparatus of a resist film for peeling-off a resist film on an Si—C based film that has been formed on a substrate and for applying a next resist film comprising:
A reworking apparatus of a resist film comprising:
Dependencies are inferred from the claim text.