Hydrogel-supported porous semiconductor devices

A method of making a substantially flexible porous semiconductor material comprising:

• introducing a semiconductor substrate into an electrochemical etching bath;
• applying a current density for a sufficient duration to achieve a porous region of the semiconductor substrate;
• and
• second applying a sufficiently high current density to cause electropolishing of an interface between the porous region and a remainder of the semiconductor substrate, wherein said second applying releases the porous region from the remainder of the semiconductor substrate.