Device and method for forming film for organic electro-luminescence element using inductive coupling CVD
OwnerKazuo Wadainventor
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Abstract
A method for forming an electro-luminescence device, in accordance with one embodiment of the present invention, includes forming a high polymer film on an electro-luminescence panel utilizing an inductive coupling plasma chemical vapor deposition process. The method also includes forming a silicon nitride or silicon oxynitride film on said high polymer film utilizing the inductive coupling plasma chemical vapor deposition process.
Claims17
A plasma CVD method that is carried out using an inductively coupled CVD apparatus that forms films of high polymer, silicon oxynitride (SiON), or silicon nitride (SiN) on an organic electro-luminescence (EL) device, wherein high polymer, silicon nitride, or silicon oxynitride films are formed by introducing a processing gas into an evacuated vacuum chamber and supplying high frequency electric power to the vacuum chamber through a transmissive window of an insulator when a high frequency electric power of 13.56 MHz is applied to a coil-shaped external electrode (12) that is located above the vacuum chamber.
A plasma CVD apparatus that is an inductively coupled CVD apparatus that forms films of high polymer, silicon oxynitride (SiON), or silicon nitride (SiN) on a device comprising an organic layer, wherein high polymer, silicon nitride, or silicon oxynitride films are formed by introducing a processing gas into an evacuated vacuum chamber and supplying high frequency electric power to the vacuum chamber through a transmissive window of an insulator when a high frequency electric power of 13.56 MHz is applied to a coil-shaped external electrode (12) that is located above the vacuum chamber.
A method for forming an electro-luminescence device comprising:
- forming a high polymer film on an organic electro-luminescence panel utilizing an inductive coupling plasma chemical vapor deposition process;
- and
- forming a silicon nitride or silicon oxynitride film on said high polymer film utilizing an inductive coupling plasma chemical vapor deposition process.
Dependencies are inferred from the claim text.