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US 2007/0183469 A1Published application
Nitride based semiconductor laser diode
AssigneeSamsung Electronics Co., Ltd.
InventorHan-youl Ryu
Life of this patent
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Abstract
A nitride based semiconductor laser diode is provided. The nitride based semiconductor laser diode includes: a lower contact layer, a lower clad layer, an active layer, and an upper clad layer sequentially stacked on a substrate, wherein the refractive index of the lower clad layer is equal to or greater than the refractive index of the lower contact layer.
Claims11
A nitride based semiconductor laser diode comprising:
- a substrate;
- a lower contact layer;
- a lower clad layer;
- an active layer;
- and
- an upper clad layer sequentially stacked on the substrate,
- wherein the refractive index of the lower clad layer is equal to or greater than the refractive index of the lower contact layer.
4 more elements
A nitride based semiconductor laser diode comprising:
- a substrate;
- a lower clad layer;
- an active layer;
- and
- an upper clad layer sequentially stacked on the substrate,
- wherein the refractive index of the lower clad layer is equal to or greater than the refractive index of the substrate.
3 more elements
Dependencies are inferred from the claim text.