Nonvolatile semiconductor memory device and method of rewriting data thereof
AssigneeRenesas Technology Corp.
InventorsKatsutoshi Urabe, Yuji Uji
Life of this patent
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Abstract
The nonvolatile semiconductor memory device of the present invention includes a memory cell array wherein data is stored in a nonvolatile state based on a difference in memory information between two memory cells comprising a memory cell pair, and a writing controller for writing data to the memory cell array. The writing controller is capable of individually setting memory information of each of the memory cells in the memory cell array.
Claims2
-7. (canceled)
A method of rewriting data of a nonvolatile semiconductor memory device, said nonvolatile semiconductor memory device comprising a memory cell array having a plurality of memory cells, and a writing controller for writing data to said memory cell array, wherein
- said memory cell array stores data in a nonvolatile state with respect to each memory cell pair composed of two memory cells, the data storing being executed based on a difference in memory information between said two memory cells,
- said writing controller is capable of setting a threshold voltage of each of said memory cells of said memory cell array to three or more levels,
- said writing controller sets said memory information of each of said memory cells individually by setting the threshold voltage of each of said memory cells of said memory cell array, and
- said method of rewriting data comprises the steps of:
- (a) writing data to said memory cell pair;
- and
- (b) rewriting said data written in said step (a), wherein
- in step (a), the threshold voltage of one memory cell included in said memory cell pair is set to a lower level than that of the threshold voltage of the other memory cell in said memory cell pair, while said threshold voltage of said other memory cell is set to a level chosen from said three or more levels except the greatest one, and
- in step (b), the threshold voltage of said one memory cell is increased to a level greater than the threshold voltage of said other memory cell.
Dependencies are inferred from the claim text.