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US 2007/0183189 A1Published application
Memory having nanotube transistor access device
OwnerThomas Nirschl, Ronald Kakoschkeinventors
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Abstract
A memory cell includes a memory element and a nanotube transistor contacting the memory element for accessing the memory element.
Claims28
A memory cell comprising:
- a memory element;
- and
- a nanotube transistor contacting the memory element for accessing the memory element.
A memory comprising:
- a first conductive line;
- a first memory element coupled to the first conductive line;
- a first nanotube transistor having a source-drain path, a first side of the source-drain path contacting the first memory element;
- a first word line coupled to a gate of the first nanotube transistor;
- and
- a second conductive line coupled to a second side of the source-drain path of the first nanotube transistor.
3 more elements
A memory comprising:
- a first conductive line;
- a first memory element coupled to the first conductive line;
- a first nanotube transistor having a source-drain path, a first side of the source-drain path contacting the first memory element;
- a second conductive line coupled to a second side of the source-drain path of the first nanotube transistor;
- a second memory element coupled to the first conductive line;
- a second nanotube transistor having a source-drain path, a first side of the source-drain path contacting the second memory element;
- a third conductive line coupled to a second side of the source-drain path of the second nanotube transistor;
- and
- a word line coupled to a gate of the first nanotube transistor and a gate of the second nanotube transistor.
6 more elements
A method for fabricating a memory, the method comprising:
- providing a memory element;
- and
- providing a nanotube transistor coupled to the memory element for accessing the memory element.
A method for fabricating a memory, the method comprising:
- providing a first conductive line;
- providing a first memory element coupled to the first conductive line;
- providing a first nanotube transistor having a source-drain path, a first side of the source-drain path contacting the memory element;
- providing a first word line coupled to a gate of the first nanotube transistor;
- and
- providing a second conductive line coupled to a second side of the source-drain path of the first nanotube transistor.
3 more elements
A phase-change memory comprising:
- a first conductive line;
- a phase-change memory element coupled to the first conductive line;
- a carbon nanotube transistor having a source-drain path, a first side of the source-drain path contacting the memory element;
- a word line coupled to a gate of the nanotube transistor;
- and
- a second conductive line coupled to a second side of the source-drain path of the nanotube transistor,
- wherein applying a first signal on the word line turns on the nanotube transistor to pass a second signal between the first conductive line and the second conductive line to access the memory element.
4 more elements
Dependencies are inferred from the claim text.