Mram based on vertical current writing and its control method

An MRAM based on vertical current writing, comprising:

• a) a memory control unit array composed of transistor ATR (4) units, the control unit array being integrated in a semiconductor substrate;
• b) a memory cell array composed of a magnetic film cell MFC (2);
• c) contact holes (3e, 3f) and a transitional metal layer, the magnetic film cell MFC (2) being connected to the transistor ATR (4) units through the contact holes (3e, 3f) and the transitional metal layer;
• and
• d) a word line WL (3d) and a bit line BL (3a), characterized in that the bit line BL (3a) being arranged above on the magnetic film cell MFC (2), directly connected with the magnetic film cell MFC (2), and vertical to an easy magnetization direction of the magnetic film cell MFC (2).

An MRAM (Magnetoresistive Random Access Memory) based on vertical current writing, comprising:

• a) a memory read/write control unit array composed of transistor ATR (4) units, the read/write control unit being integrated in a semiconductor substrate;
• b) a memory cell array composed of a magnetic film cell MFC (2);
• c) contact holes (3e, 3f);
• and
• d) a word line WL (3d) and two bit lines BL1 (3a) and BL2 (3g), characterized in that further comprising a transitional metal layer (3b), the magnetic film cell MFC (2) is connected to the transistor ATR (4) unit through the transitional metal layer (3b) and the contact hole (3f);
• the bit lines BL1 (3a) and BL2 (3g) are isolated by insulation medium and are parallel to each other in direction, and meantime the bit line BL2 (3g) is connected directly to the magnetic film cell MFC (2).

An MRAM (Magnetoresistive Random Access Memory) based on vertical current writing, comprising:

• a) a memory read/write control unit array composed of transistor ATR (4) units, the read/write control unit array being integrated in a semiconductor substrate;
• b) a memory cell array composed of a magnetic film cell MFC (2);
• c) contact holes (3e, 3f);
• and
• d) two word lines WL1 (3d) and WL2 (3g) and a bit line BL (3a), characterized in that the word line WL2 (3g) being connected directly to the magnetic film cell MFC (2) and is vertical to the bit line BL (3a).