Back to results
US 2007/0183100 A1Published application
Magnetic tunnel transistor with thin read gap for head applications
AssigneeHitachi Global Storage Technologies Netherlands B.V.
InventorHardayal Gill
Life of this patent
Estimating the term…
Abstract
A magnetic tunnel transistor (MTT) for a disk drive read head includes a barrier of TiO disposed between a ferromagnetic collector and a ferromagnetic base for preferentially selecting only “hot” electrons for propagation to the collector.
Claims20
A magnetic tunnel transistor (MTT) comprising:
- a ferromagnetic base;
- a ferromagnetic emitter structure;
- and
- a ferromagnetic collector that does not include GaAs.
1 more element
A magnetic tunnel transistor (MTT) comprising:
- a ferromagnetic base;
- a ferromagnetic emitter structure;
- a ferromagnetic collector;
- and
- a barrier layer between the collector and base and having a barrier height of less than three-tenths of an electron volt.
2 more elements
A read head for a disk drive, comprising:
- a magnetic tunnel transistor (MTT) including a barrier of TiO disposed between a ferromagnetic collector and a ferromagnetic base.
Dependencies are inferred from the claim text.