Semiconductor device and method for manufacturing same
AssigneeNEC Electronics Corporation
InventorsTatsuya Usami, Koichi Ohto
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Abstract
An improved migration resistance of the interconnect is provided and a diffusion of silicon into the inside of the interconnect is suppressed. A semiconductor device includes a silicon substrate, a first insulating film provided on the silicon substrate and composed of an SiCN film, an SiOC film and an SiO2 film, and a first copper interconnect provided in the first insulating film and essentially composed of a copper-containing metal. An Si—O unevenly distributed layer doped with injected silicon is included in the vicinity of the surface in the inside of the first copper interconnect, and injected atomic silicon at least partially creates Si—O bond.
Claims20
A semiconductor device, comprising:
- a substrate;
- a first insulating film provided on said substrate;
- and
- an interconnect, provided in said first insulating film, and essentially composed of a copper-containing metal,
- wherein said semiconductor device includes a region doped with injected silicon in the vicinity of a surface of said interconnect in the inside of said interconnect, and injected atomic silicon at least partially forms silicon-oxygen (Si—O) bond.
A method for manufacturing a semiconductor device, comprising:
- forming a first insulating film on a substrate;
- forming an interconnect in said first insulating film, said interconnect being essentially composed of a copper-containing metal;
- inducing a reduction of copper in the vicinity of a surface of said interconnect;
- injecting silicon in the vicinity of a surface of said interconnect in the inside of said interconnect by exposing an upper portion of said interconnect to a gas containing silicon, after said inducing a reduction of copper;
- and
- at least partially inducing silicon injected in said injecting silicon to create Si—O bond.
Dependencies are inferred from the claim text.