Methods for bonding and devices according to such methods

A device comprising at least a radio element and a DSP element, the elements being bonded by a bonding structure located between a first main surface of the radio element and a first main surface of the DSP element, wherein the bonding structure comprises a solder structure including a stack of a lower and an upper solder ball forming a single structure, and wherein the lower and the upper solder balls are laterally embedded in a non-conductive material up to an embedding level which is lower than the height of the top surface of the respective solder balls.

A device comprising at least three elements, the first two elements being bonded by a bonding structure located between a first main surface of a first element and a first main surface of a second element, wherein the bonding structure comprises a solder structure which is essentially a stack of a lower and an upper solder ball, which are forming a single structure, and wherein the lower and the upper solder balls are laterally embedded in a non-conductive material up to an embedding level which is lower than the height of the top surface of the respective solder balls, and wherein a first main surface of a third element is bonded by the bonding structure to a main surface of either the first element or the second element.

A device comprising at least three elements, the first two elements being bonded by a bonding structure located between a first main surface of a first element and a first main surface of a second element, wherein the bonding structure comprises a solder structure which is essentially a stack of a first and a second solder ball, which are forming a single structure, and wherein the first solder ball is laterally embedded in a non-conductive material up to an embedding level which is lower than the height of the top surface of the solder ball, and wherein a first main surface of a third element is bonded by the bonding structure to a main surface of either the first element or the second element.

A device comprising at least two elements, the elements being bonded by a bonding structure located between a first main surface of a first element and a first main surface of a second element, wherein the bonding structure comprises a solder structure which is essentially a stack of a first and a second solder ball, which are forming a single structure, wherein the first solder ball is laterally embedded in a non-conductive material up to an embedding level which is lower than the height of the top surface of the first solder ball, and wherein the first main surface of the first element and the first main surface of the second element comprise components or structures, and whereby the first and the second solder balls are such that the height of the components or structures is smaller than the height of the first solder ball and the second solder ball respectively.

A device comprising at least two elements, the elements being bonded by a bonding structure located between a first main surface of a first element and a first main surface of a second element, wherein the bonding structure comprises a solder structure which is essentially a stack of a first and a second solder ball, which are forming a single structure, wherein the first solder ball is laterally embedded in a non-conductive material up to an embedding level which is lower than the height of the top surface of the first solder ball, and wherein the first main surface of the first element or the first main surface of the second element comprise components or structures, and whereby the first and the second solder balls are such that the height of the components or structures is smaller than the height of the first solder ball and the second solder ball respectively.

A device comprising at least two elements, the elements being bonded by a bonding structure located between a first main surface of a first element and a first main surface of a second element, wherein the bonding structure comprises a solder structure which is essentially a stack of a first and a second solder ball, which are forming a single structure, wherein the first solder ball is laterally embedded in a non-conductive material up to an embedding level which is lower than the height of the top surface of the first solder ball, and wherein the first main surface of the first element and the first main surface of the second element comprise components or structures which have a topology that extends outwards from the respective main surfaces, and whereby the first and the second solder balls are such that the height of at least one of the components or structures on the first main surface of the first element and the first main surface of the second element is smaller than the height of the joined solder structure but larger than the solder balls on the corresponding main surface.

A device comprising at least two elements, the elements being bonded by a bonding structure located between a first main surface of a first element and a first main surface of a second element, wherein the bonding structure comprises a solder structure which is essentially a stack of a first and a second solder ball, which are forming a single structure, wherein the first solder ball is laterally embedded in a non-conductive material up to an embedding level which is lower than the height of the top surface of the first solder ball, and wherein the first main surface of the first element or the first main surface of the second element comprise components or structures which have a topology that extends outwards from the respective main surfaces, and whereby the first and the second solder balls are such that the height of at least one of the components or structures on the first main surface of the first element or the first main surface of the second element is smaller than the height of the joined solder structure but larger than the solder balls on the corresponding main surface.