Semiconductor device
AssigneeRenesas Technology Corp.
InventorsTeruaki Kanzaki, Yoshinori Deguchi, Kazunobu Miki
Life of this patent
Estimating the term…
Abstract
The present invention aims at offering the semiconductor device which can improve the strength to the stress generated with a bonding pad. In the semiconductor device concerning the present invention, a plurality of bonding pads are formed on a semiconductor chip. In each bonding pad, a plurality of second line-like metals are formed under the first metal formed using the wiring layer of the top layer. And a bonding pad is put in order and located along the long-side direction of a second metal to achieve the above objects. That is, a bonding pad is put in order and located so that the long-side direction of a second metal and the arrangement direction of a bonding pad may become in the same direction.
Claims36
A semiconductor device with a plurality of bonding pads each having a first metal formed using a top layer wiring layer, and a plurality of second metals each of which has a line shape, is arranged under the first metal, and is connected with the first metal concerned, wherein
- the bonding pads are put in order and located to a long-side direction of the second metal which has a line shape.
A semiconductor device with a bonding pad having a first metal formed using a top layer wiring layer, and a plurality of second metals each of which has a line shape, is arranged under the first metal, and is connected with the first metal concerned, wherein
- the second metals are embedded in an insulating layer under the first metal, and an upper part is connected mutually in the insulating layer concerned.
A semiconductor device with a bonding pad having a first metal formed using a top layer wiring layer, and a plurality of second metals each of which has a line shape, is arranged under the first metal, and is connected with the first metal concerned,
- wherein
- the semiconductor device concerned has a first lower-layer wiring layer of one layer under than the top layer wiring layer;
- and
- the bonding pad has an etching stopper which is arranged under the second metal and formed using a barrier metal of the first lower-layer wiring layer front surface.
A semiconductor device, comprising:
- a bonding pad;
- a wiring which passes along a lower part of the bonding pad;
- and
- a plurality of metals of predetermined shape over the wiring in a region of a lower part of the bonding pad.
A semiconductor device, comprising:
- a bonding pad;
- an output buffer which outputs a signal to the bonding pad;
- an input buffer into which a signal applied to the bonding pad is inputted;
- and
- an internal circuit connected to an input side of the output buffer, and to an output side of the input buffer;
- wherein the bonding pad is formed above the output buffer, and is not formed above the input buffer and the internal circuit.
A semiconductor device, comprising:
- a bonding pad;
- an output buffer which outputs a signal to the bonding pad;
- an input buffer into which a signal applied to the bonding pad is inputted;
- and
- an internal circuit connected to an input side of the output buffer, and an output side of the input buffer;
- wherein the bonding pad is formed ranging over an upper part of the output buffer and the input buffer, and an upper part of a part of the internal circuit.
Dependencies are inferred from the claim text.