Stacked semiconductor structure and fabrication method thereof
AssigneeSiliconware Precision Industries Co., Ltd.
InventorsChien-Ping Huang, Chih-Ming Huang, Han-Ping Pu, Yu-Po Wang, Cheng-Hsu Hsiao
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AssigneeSiliconware Precision Industries Co., Ltd.
InventorsChien-Ping Huang, Chih-Ming Huang, Han-Ping Pu, Yu-Po Wang, Cheng-Hsu Hsiao
Estimating the term…
A stacked semiconductor structure and fabrication method thereof are provided. The method includes mounting and connecting electrically a semiconductor chip to a first substrate, mounting on the first substrate a plurality of supporting members corresponding in position to a periphery of the semiconductor chip, mounting a second substrate having a first surface partially covered with a tape and a second surface opposite to the first surface on the supporting members via the second surface, connecting electrically the first and second substrates by bonding wires, forming on the first substrate an encapsulant for encapsulating the semiconductor chip, the supporting members, the second substrate, the bonding wires, and the tape with an exposed top surface, and removing the tape to expose the first surface of the second substrate and allow an electronic component to be mounted thereon. The present invention prevents reflow-induced contamination, spares a special mold, and eliminates flash.
A method of fabricating a stacked semiconductor structure, comprising the steps of:
A stacked semiconductor structure, comprising:
Dependencies are inferred from the claim text.