Cmos devices with hybrid channel orientations and method for fabricating the same

Abstract

The present invention relates to a semiconductor substrate comprising at least first and second device regions, wherein the first device region comprises a first recess having interior surfaces oriented along a first set of equivalent crystal planes, and wherein the second device region comprises a second recess having interior surfaces oriented along a second, different set of equivalent crystal planes. A semiconductor device structure can be formed using such a semiconductor substrate. Specifically, at least one n-channel field effect transistor (n-FET) can be formed at the first device region, which comprises a channel that extends along the interior surfaces of the first recess. At least one p-channel field effect transistor (p-FET) can be formed at the second device region, which comprises a channel that extends along the interior surfaces of the second recess.

Dependencies are inferred from the claim text.