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US 2007/0181977 A1Published application
Solutions for integrated circuit integration of alternative active area materials
AssigneeAmberWave Systems Corporation
InventorsAnthony Lochtefeld, Matthew Currie, Zhi-Yuan Cheng, James Fiorenza
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Abstract
Methods of forming areas of alternative material on crystalline semiconductor substrates, and structures formed thereby. Such areas of alternative material are suitable for use as active areas in MOSFETs or other electronic or opto-electronic devices.
Claims12
A method for forming a structure, the method comprising:
- providing a substrate comprising a crystalline semiconductor material;
- forming a masking layer over the substrate;
- defining a window in the masking layer;
- filling the window with an active area material by selective epitaxy;
- and
- defining a device including at least a portion of the active area material.
3 more elements
-13. (canceled)
A structure comprising:
- a first active area comprising a first active area material and bound by a first shallow trench isolation region having a first width;
- and
- a second active area comprising a second active area material and bound by a second shallow trench isolation region having a second width,
- wherein a ratio of the first width to the second width is greater than 1.
1 more element
-20. (canceled)
A structure comprising:
- a first isolation region;
- a first active area comprising a first semiconductor material and bound by the first isolation region;
- a second isolation region;
- and
- a second active area comprising a second semiconductor material different from the first semiconductor material and bound by the second isolation region,
- wherein a surface of the first semiconductor material, a surface of the second semiconductor material, a surface of the first isolation region, and a surface of the second isolation region are all substantially coplanar.
3 more elements
-64. (canceled)
Dependencies are inferred from the claim text.