Fabrication process of semiconductor device and semiconductor device
AssigneeFujitsu Limited
InventorsHirofumi Watatani, Ken Sugimoto
Life of this patent
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Abstract
A method of fabricating a semiconductor device comprises the steps of forming an isolation trench in a semiconductor substrate, depositing a silicon oxide film on the semiconductor substrate by a high-density plasma CVD process such that the silicon oxide film fills the isolation trench and such that the silicon oxide film contains water with such an amount that there is caused a shrinkage in the silicon oxide film when a dehydration process is applied to the silicon oxide film, causing a shrinkage in the silicon oxide film by dehydrating the silicon oxide film, and removing the silicon oxide film deposited on the silicon substrate by a chemical mechanical polishing process.
Claims14
A method of fabricating a semiconductor device, comprising the steps of:
- forming an isolation trench in a semiconductor substrate;
- depositing a silicon oxide film over said semiconductor substrate by a high-density plasma CVD process such that said silicon oxide film fills said isolation trench and such that said silicon oxide film contains water with such an amount that there is caused a shrinkage in said silicon oxide film when a dehydration process is applied to said silicon oxide film;
- causing a shrinkage in said silicon oxide film by dehydrating said silicon oxide film;
- and
- removing said silicon oxide film deposited on said silicon substrate by a chemical mechanical polishing process.
A method of fabricating a semiconductor device, comprising the steps of:
- forming an isolation trench in a substrate surface;
- depositing a silicon oxide film over said semiconductor substrate surface at a temperature of 290° C. or less;
- dehydrating said silicon oxide film;
- and
- removing said silicon oxide film deposited on said silicon substrate by a chemical mechanical polishing process.
A semiconductor device, comprising:
- a semiconductor substrate;
- an isolation trench formed in said semiconductor substrate so as to define a device region;
- an isolation insulator film filling said isolation trench;
- and
- an active device formed on said semiconductor substrate in said device region,
- wherein said device insulator film comprises lamination of plural oxide films formed parallel with each other.
Dependencies are inferred from the claim text.