Semiconductor device, an electronic device and an electronic apparatus

A semiconductor device comprising:

• a base which is mainly formed of a semiconductor material;
• an object to be insulated from the base;
• and
• an insulating film provided between the base and the object for insulating the object from the base, the insulating film being formed of an insulative inorganic material as a main material, the insulative inorganic material containing silicon, oxygen and at least one kind of element other than silicon and oxygen, the insulating film being provided in contact with the base, the insulating film containing hydrogen atoms, and the object being a gate electrode and the insulating film being a gate insulating film for insulating the gate electrode from the base,
• wherein the gate insulating film has a region in the vicinity of an interface between the gate insulating film and the base where A and B satisfy the relation:
• B/A is 10 or less (here, B is more than A) in the case where the total concentration of the at least one kind of element in the region is defined as A and the total concentration of hydrogen in the region is defined as B, in which the region is at least a part of the gate insulating film in the thickness direction thereof.