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US 2007/0181955 A1Published application
Metal oxide semiconductor transistor
AssigneeUnited Microelectronics Corp.
InventorsMing-Tsung Chen, Chang-Chi Huang, Po-Chao Tsao
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Abstract
A metal oxide semiconductor (MOS) transistor is disclosed. The MOS transistor includes: a semiconductor substrate; a gate disposed on the semiconductor substrate, wherein the gate comprises two sidewalls; a spacer formed on the sidewalls of the gate; a source/drain region disposed in the semiconductor substrate; a silicide layer disposed on top of the gate and the surface of the source/drain region; and a retarded interface layer disposed in the junction between the silicide layer and the gate and source/drain region.
Claims7
A metal oxide semiconductor (MOS) transistor, comprising:
- a semiconductor substrate;
- a gate disposed on the semiconductor substrate, wherein the gate comprises two sidewalls;
- a spacer formed on the sidewalls of the gate;
- a source/drain region disposed in the semiconductor substrate;
- a silicide layer disposed on top of the gate and the surface of the source/drain region;
- and
- a retarded interface layer disposed in the junction between the silicide layer and the gate and source/drain region.
4 more elements
Dependencies are inferred from the claim text.