Semiconductor device having stacked transistors and method of forming the same
AssigneeSamsung Electronics Co., Ltd.
InventorsGyu-Ho LYU, Seug-Gyu KIM
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Abstract
A semiconductor device includes a first semiconductor layer, a first interlayer insulation layer, a second semiconductor layer, and a gate pattern. The first interlayer insulation layer covers the first semiconductor layer. The second semiconductor layer is formed on the first interlayer insulation layer and includes source regions, drain regions, and a channel region interposed between the source region and the drain region. The gate pattern includes a gate insulation layer on the channel region of the second semiconductor layer. At least one of the source regions and the drain regions includes an elevated layer having a top surface higher than that of the channel region.
Claims21
A semiconductor device, comprising:
- a first semiconductor layer;
- a first interlayer insulation layer covering the first semiconductor layer;
- a second semiconductor layer on the first interlayer insulation layer, the second semiconductor layer comprising a source region, a drain region and a channel region between the source and drain regions;
- and
- a gate pattern on the channel region,
- wherein at least one of the source and drain regions comprises an elevated layer, wherein a top surface of the elevated layer is above a top surface of the channel region.
A method of forming a semiconductor device, the method comprising:
- forming a first interlayer insulation layer covering a first semiconductor layer;
- forming a second semiconductor layer on the first interlayer insulation layer;
- forming a source region, a drain region and a channel region between the source and drain regions within the second semiconductor layer;
- forming a gate pattern on the channel region;
- and
- forming an elevated layer on at least one of the source and drain regions, wherein a top surface of the elevated layer is above a top surface of the channel region.
Dependencies are inferred from the claim text.