Semiconductor device and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorOsamu Nakamura
Life of this patent
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Abstract
An island-like interlayer insulating film is formed selectively in a region where a source interconnection and a gate interconnection intersect. For example, by use of ink jet method, a solution containing an insulating material is dropped on a region where the gate interconnection and the source interconnection intersect or a region where a holding capacitor is formed, that enable to reduce a photolithography process and to reduce the number of masks that are used in a TFT
Claims25
A semiconductor device comprising:
- a gate interconnection and a source interconnection formed over a substrate;
- and
- an insulating film formed between the gate interconnection and the source interconnection in a region where the gate interconnection and the source interconnection intersect.
A semiconductor device comprising:
- a gate interconnection and a source interconnection formed over a substrate, and
- an island-like insulating film formed between the gate interconnection and the source interconnection in a region where the gate interconnection and the source interconnection intersect.
A semiconductor device comprising:
- a gate interconnection and a source interconnection formed over a substrate;
- and
- an island-like insulating film formed between the gate interconnection and the source interconnection in a region where the gate interconnection and the source interconnection intersect;
- wherein the gate interconnection and the source interconnection are formed on a same insulating surface in a region where the gate interconnection and the source interconnection do not intersect.
A semiconductor device comprising:
- a source region and a source interconnection formed over a substrate;
- and
- the source region and the source interconnection connected on a same plane.
A method for manufacturing a semiconductor device comprising the steps of:
- forming a gate interconnection over a substrate;
- forming an island-like insulating layer so as to selectively cover the gate interconnection;
- and
- forming a source interconnection on a same plane of the gate interconnection,
- wherein the insulating layer is formed between the gate interconnection and the source interconnection in a region where the gate interconnection and the source interconnection intersect.
A method for manufacturing a semiconductor device comprising the steps of:
- forming a source interconnection over a substrate;
- forming an island-like insulating layer so as to selectively cover the source interconnection;
- and
- forming a gate interconnection on a same plane of the source interconnection,
- wherein the insulating layer is formed between the source interconnection and the gate interconnection in a region where the source interconnection and the gate interconnection intersect.
A method for manufacturing a semiconductor device comprising the steps of:
- forming a gate interconnection over a substrate;
- forming an island-like insulating layer so as to selectively cover the gate interconnection;
- and
- forming a source interconnection on a same plane of the gate interconnection or the island-like insulating layer.
Dependencies are inferred from the claim text.