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US 2007/0181940 A1Published application
Trench field effect transistor and method of making it
AssigneeKoninklijke Philips Electronics N.C.
InventorSteven Peake
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Abstract
Consistent with an example embodiment, a trench FET has source regions arranged above insulated gates in trenches. A body region of opposite conductivity type is arranged between the trenches and a body region is arranged above the body region. Source contact metallisation contacts the source and body contact region. In this way a small cell pitch can be achieved.
Claims10
A trench field effect transistor (trench-FET) comprising:
- a semiconductor body having opposed first and second major surfaces;
- a source metallisation at the first major surface;
- source contact regions of semiconductor doped to have a first conductivity type at the first major surface in contact with the source metallisation;
- body contact regions of semiconductor doped to have a second conductivity type opposite to the first conductivity type at the first major surface in contact with the source metallisation;
- a drain region of first conductivity type under the first major surface;
- a drain contact connected to the drain region;
- and
- insulated gates including a conductive gate in an insulated trench for controlling current flow between the source contact region and the drain region through mesa regions between the insulated gates,
- wherein the source contact regions and base contact regions alternate laterally across the first major surface, with the source contact region arranged in the insulated trench above the insulated gate.
6 more elements
A method of manufacturing a trench-FET, including the steps of:
- providing a semiconductor body having opposed first and second major surfaces doped to be of first conductivity type to form a drain region;
- implanting a body contact region at the first major surface of semiconductor doped to be of a second conductivity type opposite to the first conductivity type;
- forming trenches laterally across the first major surface alternating laterally with the body contact regions, the trenches extending below the body contact regions defining mesa regions below the body contact regions between the trenches;
- forming insulated gates in the trenches;
- depositing source regions of semiconductor doped to be of the first conductivity type in the trenches above the insulated gates;
- and
- depositing a source metallisation at the first major surface contacting the source regions and the body contact regions.
4 more elements
Dependencies are inferred from the claim text.