Interdigitated conductive lead frame or laminate lead frame for GaN die
AssigneeInternational Rectifier Corporation
InventorsKunzhong Hu, Chuan Cheah
Life of this patent
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Abstract
A GaN die having a plurality of parallel alternating and closely spaced source and drain strips is contacted by parallel coplanar comb-shaped fingers of source and drain pads. A plurality of enlarged area coplanar spaced gate pads having respective fingers contacting the gate contact of the die. The pads may be elements of a lead frame, or conductive areas on an insulation substrate. Other semiconductor die can be mounted on the pads and connected in predetermined circuit arrangements with the GaN die.
Claims18
A conductive support for a GaN semiconductor die having a plurality of parallel spaced and interleaved source and gate electrode strips on a surface of said die;
- said conductive support having an enlarged source pad and a coplanar, spaced enlarged drain pad;
- the facing edges of said source and drain pads each having a plurality of integral extending spaced parallel fingers;
- said fingers of said source and drain pads being interdigitated and parallel to one another and spaced from one another;
- the alternate source and drain fingers being disposed in alignment with and in contact with respective ones of said source and gate electrode strips.
A semiconductor device comprising a GaN die and a conductive support therefore which provides improved contact to the electrodes of said GaN die;
- said GaN die having an elongated rectangular shape;
- one surface of said die comprising a ladder of parallel coplanar contact strips which are, alternately, source and drain electrode strips, and at least one gate strip at one end of said ladder;
- said conductive support comprising an enlarged area source pad, an enlarged area drain pad and an enlarged area gate pad;
- all of said pads being spaced from one another;
- one edge of each of said source and drain pads having combs of parallel spaced contact fingers;
- said contact fingers of said source and drain pads being interdigitated and coplanar and disposed over and in contact with respective ones of said source and drain contact strips;
- said gate pad having a gate contact finger spaced from and coplanar with said contact fingers and extending therefrom and in contact with said gate strip on said die.
Dependencies are inferred from the claim text.