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US 2007/0181931 A1Published application
Hafnium tantalum oxide dielectrics
AssigneeMicron Technology, Inc.
InventorsKie Ahn, Leonard Forbes
Life of this patent
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Abstract
A dielectric layer containing a hafnium tantalum oxide film and a method of fabricating such a dielectric layer produce a dielectric layer for use in a variety of electronic devices. Embodiments include structures for capacitors, transistors, memory devices, and electronic systems with dielectric layers containing a hafnium tantalum oxide film structured as one or more monolayers.
Claims35
An electronic device comprising:
- a substrate;
- a dielectric layer disposed above substrate, the dielectric layer having a hafnium tantalum oxide layer, the hafnium tantalum oxide layer structured as one or more monolayers;
- and
- a conductive layer on and contacting the dielectric layer.
1 more element
An electronic device comprising:
- a substrate;
- a source region and a drain region separated by a body region in the substrate;
- a dielectric layer above the body region, the dielectric layer having a hafnium tantalum oxide layer, the hafnium tantalum oxide layer structured as one or more monolayers;
- and
- a gate above the dielectric layer.
2 more elements
A system comprising:
- a controller;
- an integrated circuit coupled to the controller, wherein at least one of the controller or integrated circuit includes:
- a substrate;
- a source region and a drain region separated by a body region in the substrate;
- a dielectric layer above the body region, the dielectric layer having a hafnium tantalum oxide layer, the hafnium tantalum oxide layer structured as one or more monolayers;
- and
- a gate above the dielectric layer.
4 more elements
Dependencies are inferred from the claim text.