Charge balance insulated gate bipolar transistor

An insulated gate bipolar transistor (IGBT) comprising:

• a collector region of a first conductivity type;
• a first silicon region of a second conductivity type extending over the collector region;
• a plurality of pillars of first and second conductivity types arranged in an alternating manner over the first silicon region, a bottom surface of each pillar of first conductivity type being vertically spaced from a top surface of the collector region;
• and
• a well region of the first conductivity type extending over and being in electrical contact with the plurality of pillars of first and second conductivity types;
• and
• a plurality of gate trenches each extending through the well region and terminating within one of the pillars of second conductivity type, each gate trench comprising a gate electrode therein,
• wherein physical dimensions of each of the first and second conductivity type pillars and doping concentration of charge carriers in each of the first and second conductivity type pillars are selected so as to create a charge imbalance between a net charge in each pillar of first conductivity and a net charge in its adjacent pillar of the second conductivity type.