Cmos image sensor
AssigneeSemiconductor Manufacturing International (Shanghai) Corporation
InventorsJie Huo, Jianping Yang, Chun Yan Xin
Life of this patent
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Abstract
A complementary metal oxide semiconductor (CMOS) image sensing device includes a semiconductor substrate; a photodiode defined on the substrate; a gate dielectric layer provided over the photodiode and the substrate; a polysilicon interconnect contacting a given area of the photodiode via an opening in the gate dielectric layer; a reset transistor coupled to the photodiode; a source follower transistor coupled to the photodiode; and a select transistor coupled to the source follower transistor. The given area of the photodiode defines a node that is coupled to the reset transistor and source follower transistor.
Claims10
A complementary metal oxide semiconductor (CMOS) image sensing device, comprising:
- a semiconductor substrate;
- a photodiode defined on the substrate;
- a gate dielectric layer provided over the photodiode and the substrate;
- a polysilicon interconnect contacting a given area of the photodiode via an opening in the gate dielectric layer;
- a reset transistor coupled to the photodiode;
- a source follower transistor coupled to the photodiode;
- and
- a select transistor coupled to the source follower transistor,
- wherein the given area of the photodiode defines a node that is coupled to the reset transistor and source follower transistor.
A complementary metal oxide semiconductor (CMOS) image sensing device, comprising:
- a semiconductor substrate;
- a photodiode defined on the substrate;
- a gate dielectric layer provided over the photodiode and the substrate;
- a polysilicon interconnect contacting a given area of the photodiode via an opening in the gate dielectric layer;
- a first transistor coupled to the photodiode;
- a second transistor coupled to the photodiode and the first transistor;
- and
- a third transistor coupled to the second transistor,
- wherein the given area of the photodiode defines a node that is coupled to the first and second transistors.
Dependencies are inferred from the claim text.