Manufacturing method for a semiconductor substrate comprising at least a buried cavity and devices formed with this method
AssigneeSTMicroelectronics S.r.l.
InventorsCrocifisso Renna, Luigi La Magna, Simona Lorenti, Salvatore Coffa
Life of this patent
Estimating the term…
Abstract
A method for manufacturing a semiconductor substrate of a first concentration type is described, which comprises at least a buried insulating cavity, comprising the following steps: forming on the semiconductor substrate a plurality of trenches, forming a surface layer on the semiconductor substrate in order to close superficially the plurality of trenches forming in the meantime at least a buried cavity in correspondence with the surface-distal end of the trenches.
Claims25
1-17. (canceled)
A method for manufacturing a semiconductor substrate of a first type of concentration and comprising at least one buried insulating cavity, comprising the following steps:
- form on said semiconductor substrate a plurality of trenches,
- form a surface layer on said semiconductor substrate in order to superficially close said plurality of trenches forming in the meantime said at least one buried cavity in correspondence with the surface-distal end of said trenches.
A method, comprising:
- forming openings in a substrate;
- and
- closing the openings to form at least one cavity within the substrate.
41-45. (canceled)
Dependencies are inferred from the claim text.