Semiconductor device

A charge pump circuit comprising:

• semiconductor devices each comprising a MOS capacitor in which a drain region and a source region of a MOS structure are commonly connected, and a capacitance is formed between the commonly connected drain region/source region and a gate electrode of the MOS structure and a wiring capacitor which has a first comb-shaped wiring that is formed on the MOS capacitor through an interlayer insulating film, is connected to the gate electrode of the MOS capacitor, and has projecting portions projecting like comb teeth and a second comb-shaped wiring that is formed on the MOS capacitor through the interlayer insulating film, is arranged across an inter-line insulating film from the first comb-shaped wiring, is connected to the drain region and source region, and has projecting portions projecting like comb teeth, the projecting portions of the second comb-shaped wiring being arranged alternately with the projecting portions of the first comb-shaped wiring and arranged perpendicularly to a channel direction connecting the drain region and source region of the MOS capacitor;
• an input MOS transistor having a source region connected to an input terminal to which a power supply voltage is applied;
• and
• a plurality of boost MOS transistors which are series-connected between a drain region of said input MOS transistor and an output terminal from which a boosted voltage is output,
• wherein the first comb-shaped wirings are connected to respective source regions of said boost MOS transistors, and
• pulse signals which are complementary to each other are input to the second comb-shaped wirings of respective adjacent ones of said semiconductor devices.