Light emitting diode having enhanced side emitting capability

Abstract

A LED structure with enhanced side-emitting capability is provided. An embodiment of The LED structure comprises, on top of a substrate, a metallic layer, a non-alloy ohmic contact layer, a thick transparent layer, a light generating structure, sequentially arranged in the this order from bottom to top. The metallic layer functions a reflective mirror and is made of a pure metal or a metal nitride for superior reflectivity. The non-alloy ohmic contact layer is interposed between the light generating structure and the metallic layer so as to achieve the required low resistance electrical conduction. The thick transparent layer extracts a significant portion of the light to the sides of the LED structure. The thick transparent layer, made of a semiconductor material or a dielectric material having an refractive index between 1.5 to 3.5, could be located either above, below or both above and below the light generating structure.

Dependencies are inferred from the claim text.