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AssigneeHoya Corporation
InventorsHiroaki Yanagita, Hiroshi Kawazoe, Masahiro Orita
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It is an object to provide a p-type ZnS based semiconductor material having a low resistance which can easily form an ohmic contact to a metallic material. Moreover, the invention provides a semiconductor device and a semiconductor light emitting device which include an electrode having a low resistance on a substrate other than a single crystal substrate, for example, a glass substrate. The semiconductor material according to the invention is used as a hole injecting electrode layer of a light emitting device and has a transparent property in a visible region which is expressed in a composition formula of Zn(1-α-β-γ)CuαMgβCdγS(1-x-y)SexTey (0.004≦α≦0.4, β≦0.2, γ≦0.2, 0≦x≦1, 0≦y≦0.2, and x+y≦1).
A p-type semiconductor material expressed in a composition formula of Zn(1-α-β-γ)CuαAβBγS(1-x-y)SexTey (0.004≦α≦0.4, β≦0.2, γ≦0.2, 0≦x≦1, 0≦y≦0.2, and x+y≦1, A and B are elements selected from Cd, Hg and alkaline earth metals).
Dependencies are inferred from the claim text.