Semiconductor light emitting device and method for manufacturing the same
OwnerKenji Oritainventor
Life of this patent
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Abstract
A semiconductor light emitting device comprises a semiconductor multilayer film including an active layer for generating light, a p electrode formed on the semiconductor multilayer film, and a plasmon generating layer, which are provided on a substrate. A portion of the semiconductor multilayer film including at least the active layer forms a plurality of rods. The plasmon generating layer (8) fills between each rod. The plasmon generating layer (8) is formed of a material having a negative dielectric constant at the wavelength of emitted light. The rods are arranged in a periodic manner.
Claims27
A semiconductor light emitting device comprising:
- a semiconductor multilayer film including an active layer, wherein unevenness is formed in a portion including at least the active layer;
- and
- a plasmon generating layer made of a substance having a negative dielectric constant at a frequency of light generated, and buried in the unevenness.
A semiconductor light emitting device comprising:
- a semiconductor multilayer film including an active layer, wherein unevenness is formed in a portion including at least the active layer;
- a microsphere made of a substance having a negative dielectric constant at a frequency of light generated, and buried in the unevenness;
- and
- a metal layer provided on the semiconductor multilayer film.
A method for manufacturing a semiconductor light emitting device, comprising the steps of:
- (a) forming a semiconductor multilayer film including an active layer, wherein unevenness is formed in a portion including at least the active layer;
- and
- (b) forming a plasmon generating layer made of a substance having a negative dielectric constant at a frequency of light generated, and buried in the unevenness.
A method for manufacturing a semiconductor light emitting device, comprising the steps of:
- (a) forming a semiconductor multilayer film including an active layer, wherein unevenness is formed in a portion including at least the active layer;
- (b) placing the substrate in a solution in which a microsphere made of a substance having a negative dielectric constant at a frequency of light generated is dispersed, thereby burying the microsphere in the unevenness;
- and
- (c) forming a metal layer provided on the semiconductor multilayer film.
Dependencies are inferred from the claim text.